Room Temperature Wafer Bonding Machine
Introduction
Mitsubishi Room-temperature Wafer bonder BOND MEISTER will expands the new fields of bonding application


- Suppose that two wafers are rigidly bonded at room temperature….such a dreamy idea is realized by SAB (Surface Activated Bonding)
- SAB is originally developed in Japan and has been studied for a many years.
- Today SAB technology becomes widely applied to various field, with thanks to its simple process and high degree of freedom in materials selection.
- Our mission is to help customers in R&D and mass production of the device.
- BOND MEISTER is the wafer bonder worth the name of “MEISTER”, which integrated manufacturing technology and process technology that Mitsubishi Heavy Industries has cultivated for many years.
- Mitsubishi Heavy Industries will support our customers with reliable bonding machine and high quality bonding process service.


Principle and Features
Principle
- Wafers are irradiated with atoms or ions in a vacuum.
- Oxide film and absorption layers are removed and dangling bond will appear on the bonding surface.
- These activated surface will be bonded only by touching each other.

Features
- Bonding strength is equivalent to that of the base material even when bonded at room temperature.
- No thermal strain due to bonding.
- High productivity by eliminating the heating/cooling cycle.
- Applicable to a wide range of materials, and is capable of bonding different kind of materials each other.

Applications
Category of application
- Wafer level packaging
Quality improvement and cost reduction are realized by the Wafer Level Packaging with no thermal strain for MEMS or quartz device. - Production of functional wafers
A functional wafer is produced by bonding different kinds of materials, e.g., oxides, dielectrics and optical materials. - Application to high-value added devices enabled by direct bonding
Room temperature bonding is used to improve the efficiency of semiconductor materials by direct bonding. - Three dimensionally stacked device
Wafers which have Through Silicon Vias (TSV) are stacked by room temperature bonding with no thermal stress.

Examples
Silicon family

Silicon / Silicon
Void-free high yield rate bonding can be realized.
This enables pure silicon Wafer Level Packaging instead of Silicon/Glass bonding.

Silicon oxide / Silicon oxide
Applied for insulated packaging.

Wafer Level Packaging for MEMS (Acc.sensor)
Three layers wafers are stacked.
Oxides

Quartz glass / Quartz glass
Applicable to optical device.

Quartz glass / Silicon
Example of dissimilar material bonding for optical / electrical integration.

Sapphire / Silicon
Silicon on Sapphire can be easily produced.

LiNbO3 / Silicon
Dissimilar materials with different TCE can be easily bonded.
Compound Semiconductors

GaN / Silicon
Applied for light emitting device and power device.

GaAs / GaAs
High quality bonding is realized with compound semiconductors for photonic device.

SiC / Silicon
Improvement of design flexibility and efficiency are expected by direct bonding.
Metals

Au / Au
Au film on silicon is bonded.
Pull test shows the result of breaking at base material.

Cu / Cu
Cu film on silicon is bonded.
Pull test shows the result of breaking at base material.

TSV bonding
Aluminum TSV is bonded with no thermal stress.
Bond Meister MWB-04/06-R
Standard model for R&D use to small/medium scale production
- Semi-automatic operation for 1 set (2 wafers) each.
- High throughput enables R&D use to middle scale production.
- Wafer transferring unit and alignment unit are all included. PC based easy operation.
- Customized fixture enables chip scale bonding or odd shape wafer bonding.


| Item | Specification |
|---|---|
| Set wafer | 1 set |
| Wafer diameter | 100 mm / 150 mm |
| Operation | Semi-automatic |
| Alignment accuracy | ±2 µm (Measured value ※1) |
| Surface activation | Ion gun |
| Press unit | Max. Press force 20 kN |
| Alignment | By IR transparent Image |
| Degree of vacuum | <1.0×10-5 Pa |
| Utility |
Argon gas,Nitrogen gas,Compressed air, Power supply (200 V, 100 V) |
(※1) Measured value does not mean the guaranteed value.
Bond Meister MWB-04/06/08-AX
Mass production model with high throughput and flexibility.
- 10 set wafers are bonded automatically including wafer transferring and alignment.
- Recipe can be assigned to each wafer set.Applicable for both of mass production and high-mix low volume production.
- Semi-automatic mode is prepared for R&D application. Flexible operation realizes multi-layer bonding, high freedom for trials of bonding process, and test for various materials.
- Customized fixture enables chip scale bonding or odd shape wafer bonding.
Option
- FAB gun unit
Enables high efficiency metal bonding. - Heat & Press chamber
Bonding quality will be improved by heating and pressing after bonding.


| Item | Specification |
|---|---|
| Set wafer | 10 set |
| Wafer diameter | 100 mm / 150 mm / 200 mm |
| Operation | Full-automatic / Semi-automatic |
| Alignment accuracy | ±2 µm (Measured value ※1) |
| Surface activation | Ion gun / FAB gun |
| Press unit | Max. Press force 100 kN |
| Alignment | By IR transparent Image |
| Degree of vacuum | <1.0×10-5 Pa |
| Utility |
Argon gas,Nitrogen gas,Compressed air, Power supply (200 V, 100 V) |
(※1) Measured value does not mean the guaranteed value.
Line up
Line up of Mitsubishi Bonders
- Compatible to 100 mm to 200 mm wafers.
- Wafer transfer system and alignment system are all included.
- PC based easy operation.
- Management utility for Recipe and operation logging enables high level quality management.

Merit of the Mitsubishi Wafer Bonder
- Yield will be improved by the thermal stress free bonding.
- Designing of device will have more flexibility due to the wide range of applicable materials.
- Bonding with no thermal stress will help downsizing of the device and it will cause yield improvement.
- Also minimizing the bonding area by high bonding strength will increase chip count per wafer.
- Due to the direct bonding, we don’t need intermediate materials such as eutectic metals or adhesive materials. It will help cost reduction.
- No special utilities required. It leads to low running cost.
BOND MATE

Support for customer's Development
- "Bond Mate" is our comprehensive bonding support plan for the customers trying our Room Temperature Bonding.
- It can help whole of developing phase and production phase in customer.

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