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Room Temperature Wafer Bonding Machine

Introduction

Mitsubishi Room-temperature Wafer bonder BOND MEISTER will expands the new fields of bonding application

BOND MEISTER

40/60/80AX

  • Suppose that two wafers are rigidly bonded at room temperature….such a dreamy idea is realized by SAB (Surface Activated Bonding)
  • SAB is originally developed in Japan and has been studied for a many years.
  • Today SAB technology becomes widely applied to various field, with thanks to its simple process and high degree of freedom in materials selection.
  • Our mission is to help customers in R&D and mass production of the device.
  • BOND MEISTER is the wafer bonder worth the name of “MEISTER”, which integrated manufacturing technology and process technology that Mitsubishi Heavy Industries has cultivated for many years.
  • Mitsubishi Heavy Industries will support our customers with reliable bonding machine and high quality bonding process service.

Wafer

40/60/80AX

Principle and Features

Principle

  • Wafers are irradiated with atoms or ions in a vacuum.
  • Oxide film and absorption layers are removed and dangling bond will appear on the bonding surface.
  • These activated surface will be bonded only by touching each other.

Principle

Features

  • Bonding strength is equivalent to that of the base material even when bonded at room temperature.
  • No thermal strain due to bonding.
  • High productivity by eliminating the heating/cooling cycle.
  • Applicable to a wide range of materials, and is capable of bonding different kind of materials each other.

Features

Applications

Category of application

  • Wafer level packaging
    Quality improvement and cost reduction are realized by the Wafer Level Packaging with no thermal strain for MEMS or quartz device.
  • Production of functional wafers
    A functional wafer is produced by bonding different kinds of materials, e.g., oxides, dielectrics and optical materials.
  • Application to high-value added devices enabled by direct bonding
    Room temperature bonding is used to improve the efficiency of semiconductor materials by direct bonding.
  • Three dimensionally stacked device
    Wafers which have Through Silicon Vias (TSV) are stacked by room temperature bonding with no thermal stress.

Applications

Examples

Silicon family

Silicon/Silicon

Silicon / Silicon

Void-free high yield rate bonding can be realized.
This enables pure silicon Wafer Level Packaging instead of Silicon/Glass bonding.

Silicon oxide/Silicon oxide

Silicon oxide / Silicon oxide

Applied for insulated packaging.

Acc.sensor

Wafer Level Packaging for MEMS (Acc.sensor)

Three layers wafers are stacked.

Oxides

Quartz glass/Quartz glass

Quartz glass / Quartz glass

Applicable to optical device.

Quartz glass/Silicon

Quartz glass / Silicon

Example of dissimilar material bonding for optical / electrical integration.

Sapphire/Silicon

Sapphire / Silicon

Silicon on Sapphire can be easily produced.

LiNbO3/Silicon

LiNbO3 / Silicon

Dissimilar materials with different TCE can be easily bonded.

Compound Semiconductors

GaN/Silicon

GaN / Silicon

Applied for light emitting device and power device.

GaAs/GaAs

GaAs / GaAs

High quality bonding is realized with compound semiconductors for photonic device.

SiC/Silicon

SiC / Silicon

Improvement of design flexibility and efficiency are expected by direct bonding.

Metals

Au/Au

Au / Au

Au film on silicon is bonded.
Pull test shows the result of breaking at base material.

Cu/Cu

Cu / Cu

Cu film on silicon is bonded.
Pull test shows the result of breaking at base material.

TSV bonding

TSV bonding

Aluminum TSV is bonded with no thermal stress.

Bond Meister MWB-04/06-R

Standard model for R&D use to small/medium scale production

  • Semi-automatic operation for 1 set (2 wafers) each.
  • High throughput enables R&D use to middle scale production.
  • Wafer transferring unit and alignment unit are all included. PC based easy operation.
  • Customized fixture enables chip scale bonding or odd shape wafer bonding.

40/60R

40/60R layout

Item Specification
Set wafer 1 set
Wafer diameter 100 mm / 150 mm
Operation Semi-automatic
Alignment accuracy ±2 µm (Measured value ※1)
Surface activation Ion gun
Press unit Max. Press force 20 kN
Alignment By IR transparent Image
Degree of vacuum <1.0×10-5 Pa
Utility Argon gas,Nitrogen gas,Compressed air,
Power supply (200 V, 100 V)

(※1) Measured value does not mean the guaranteed value.

Bond Meister MWB-04/06/08-AX

Mass production model with high throughput and flexibility.

  • 10 set wafers are bonded automatically including wafer transferring and alignment.
  • Recipe can be assigned to each wafer set.Applicable for both of mass production and high-mix low volume production.
  • Semi-automatic mode is prepared for R&D application. Flexible operation realizes multi-layer bonding, high freedom for trials of bonding process, and test for various materials.
  • Customized fixture enables chip scale bonding or odd shape wafer bonding.

Option

  • FAB gun unit
    Enables high efficiency metal bonding.
  • Heat & Press chamber
    Bonding quality will be improved by heating and pressing after bonding.

40/60/80AX

40/60/80AX layout

Item Specification
Set wafer 10 set
Wafer diameter 100 mm / 150 mm / 200 mm
Operation Full-automatic / Semi-automatic
Alignment accuracy ±2 µm (Measured value ※1)
Surface activation Ion gun / FAB gun
Press unit Max. Press force 100 kN
Alignment By IR transparent Image
Degree of vacuum <1.0×10-5 Pa
Utility Argon gas,Nitrogen gas,Compressed air,
Power supply (200 V, 100 V)

(※1) Measured value does not mean the guaranteed value.

Line up

Line up of Mitsubishi Bonders

  • Compatible to 100 mm to 200 mm wafers.
  • Wafer transfer system and alignment system are all included.
  • PC based easy operation.
  • Management utility for Recipe and operation logging enables high level quality management.

Line up

Merit of the Mitsubishi Wafer Bonder

  • Yield will be improved by the thermal stress free bonding.
  • Designing of device will have more flexibility due to the wide range of applicable materials.
  • Bonding with no thermal stress will help downsizing of the device and it will cause yield improvement.
  • Also minimizing the bonding area by high bonding strength will increase chip count per wafer.
  • Due to the direct bonding, we don’t need intermediate materials such as eutectic metals or adhesive materials. It will help cost reduction.
  • No special utilities required. It leads to low running cost.

BOND MATE

Bond Mate

Support for customer's Development

  • "Bond Mate" is our comprehensive bonding support plan for the customers trying our Room Temperature Bonding.
  • It can help whole of developing phase and production phase in customer.

Support for customer's Development

Site Map

Site Map


Business contact: Machine Tool 


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